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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJ15004 DESCRIPTION *With TO-3 package *Complement to type MJ15003 *Excellent safe operating area APPLICATIONS *For high power audio,disk head positioners and other linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC IB IE PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -5 -20 -5 25 250 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.7 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-0.2A ;IB=0 IC=-5A; IB=-0.5A IC=-5A ; VCE=-2V VCE=-140V; IB=0 VCE=-140V; VBE(off)=-1.5V TC=150 VEB=-5V; IC=0 IC=-5A ; VCE=-2V VCE=-50Vdc,t=1 s, Nonrepetitive VCE=-100Vdc,t=1 s, Nonrepetitive IE=0 ; VCB=-10V;f=1.0MHz IC=-0.5A ; VCE=-10V;f=0.5MHz 2 25 -5 MIN -140 MJ15004 SYMBOL VCEO(SUS) VCE(sat) VBE ICEO ICEX IEBO hFE TYP. MAX UNIT V -1.0 -2.0 -0.25 -0.1 -2.0 -0.1 150 V V mA mA mA Is/b Second breakdown collector current With base forward biased A -1 1000 pF MHz COB fT Output capacitance Transition frequency 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJ15004 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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